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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 26A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：26 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：59 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：49 nC
- Td (on/off) @ 25°C：27ns/94ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGTH50TK65GC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in a TO-3PFM-3 package designed for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current of 26 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 59 W. It operates within a temperature range of -40°C to +175°C.
Feature Summary
- Field Stop Trench IGBT structure for high-speed switching performance
- Low collector-emitter saturation voltage characteristics
- High thermal stability with a maximum junction temperature of 175°C
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the specific suffix GC11 against the manufacturer's latest datasheet to confirm pinout and packaging details. Ensure the ordering quantity meets any minimum order requirements specified by the distributor. Confirm RoHS compliance status directly from the official documentation before finalizing procurement.
Selection Notes
Select this component when a 650V IGBT with a TO-3PFM package is required for through-hole applications. Compare the 26 A continuous current rating against the circuit's peak load demands. Evaluate the 59 W power dissipation capability relative to the available heatsinking and ambient thermal conditions in the target design.
Part Context
This part belongs to the RGTH series of high-speed switching IGBTs from ROHM. It shares the Field Stop Trench architecture with other models like the RGW00TK65DGVC11 but differs in current rating and package type. The TO-3PFM form factor distinguishes it from the TO-247N packages found in the RGTV or RGS series.
Replacement Considerations
Direct substitutes may include other ROHM 650V IGBTs in the TO-3PFM package, such as the RGW00TK65DGVC11, provided the current and thermal ratings are sufficient. Verify that any replacement maintains the same pin configuration and switching characteristics.
