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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：174 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：49 nC
- Td (on/off) @ 25°C：27ns/94ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGTH50TS65DGC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Trench Field Stop technology to achieve high-speed switching capabilities. The device features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 26 A at 25°C. It is housed in a TO-3PFM package with three pins for through-hole mounting. The component supports a maximum power dissipation of 59 W and operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Trench Field Stop structure for low saturation voltage and fast switching
- Integrated Fast Recovery Diode (FRD) for efficient commutation
- Soft recovery characteristics to minimize switching losses and voltage overshoot
Applications
- High-frequency power supplies
- Uninterruptible Power Supplies (UPS)
- Industrial motor drives
Procurement Notes
Verify the specific suffix 'C11' against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the ordering quantity aligns with the standard tube packing configuration provided by ROHM. Cross-reference the part number with authorized distributors to confirm current production status and availability.
Selection Notes
Select this component for applications requiring a balance between low conduction loss and high-speed switching performance. The TO-3PFM package is suitable for designs needing robust thermal management via direct heatsink mounting. Consider the 650V rating for medium-voltage AC/DC conversion systems where compact form factors are required.
Part Context
This IGBT belongs to the RGTH series, which focuses on high-efficiency solutions for general-purpose inverters and power converters. The series integrates an FRD to simplify circuit design by eliminating the need for external anti-parallel diodes. It represents ROHM's effort to reduce system size and cost through improved switching efficiency.
Replacement Considerations
Direct replacements must match the 650V rating, 26A current capacity, and TO-3PFM package. Verify that substitute parts offer comparable saturation voltage and reverse recovery time to maintain original circuit performance and thermal characteristics.
