RGTH50TS65DGC13

$5.41

Description：IGBT TRENCH FS 650V 50A TO-247G
Series：-

SKU:d5deca6228b0 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 50A TO-247G
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
Power - Max：174 W
Switching Energy：-
Input Type：Standard
Gate Charge：49 nC
Td (on/off) @ 25°C：27ns/94ns
Test Condition：400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：58 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247G
Grade：-
Qualification：-

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RGTH50TS65DGC13

Overview

The RGTH50TS65DGC13 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Silicon technology and features a Field Stop Trench structure within a TO-247G-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and offers a continuous collector current rating of 50 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9 V, a power dissipation capacity of 174 W, and a gate-emitter leakage current of 200 nA. It operates within a temperature range of -40°C to +175°C.

Feature Summary

Field Stop Trench IGBT architecture for optimized switching performance
Integrated fast recovery freewheeling diode with soft recovery characteristics
High short-circuit withstand capability designed for inverter applications

Applications

Motor drive inverters
Switched-mode power supplies
Industrial inverter systems

Procurement Notes

Verify the specific suffix code against official datasheets to confirm pinout compatibility and thermal characteristics. Confirm RoHS compliance status and lead plating specifications prior to integration. Ensure design margins account for the specified short-circuit withstand time and junction temperature limits during operation.

Selection Notes

Select this component for high-efficiency inverter designs requiring robust short-circuit protection. The combination of low saturation voltage and fast recovery diode makes it suitable for medium-power industrial applications. Evaluate thermal management requirements based on the 174 W power dissipation rating and TO-247G package constraints.

Part Context

This part belongs to ROHM's trench field-stop IGBT series, engineered for improved switching losses and conduction efficiency. It is designed as a replacement or upgrade for older planar IGBT technologies in inverter circuits. The series emphasizes reliability and thermal stability for demanding industrial environments.

Replacement Considerations

Cross-reference with RGT50TS65DGC13 for potential functional equivalents within the same manufacturer portfolio. Verify pin compatibility and electrical parameter overlaps before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.