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The RGTH60TS65GC13 is a single IGBT from ROHM Semiconductor utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 85 A at 25°C. The device has a maximum power dissipation of 277 W and an on-state collector-emitter saturation voltage of 2.1 V. It operates within a junction temperature range of -40°C to +175°C and is housed in a TO-247GE-3 through-hole package.
Verify the specific suffix GC13 against official ROHM documentation to confirm packaging details and compliance status. Ensure the component matches the required pinout and thermal characteristics for the target PCB layout before finalizing procurement orders.
Select this component for designs requiring 650V blocking capability with high current handling up to 85A. Consider the 2.1V saturation voltage for conduction loss calculations and verify gate drive requirements align with the specified maximum ratings.
This part belongs to the RGTH series of Trench Field Stop IGBTs from ROHM. It shares architectural similarities with other models in the family but differs in current rating and package configuration, specifically offering higher current capacity compared to lower-rated variants in the same voltage class.
Direct substitutes include the RGTH60TS65DGC11 and RGTH40TS65GC11, though current ratings and specific electrical parameters differ. Verify compatibility with existing thermal and electrical constraints when considering these alternatives.