SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RGTV60TK65DGVC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 650V and a maximum continuous collector current of 33A. The device has a power dissipation rating of 76W and operates within a junction temperature range of -40°C to +175°C. Packaged in a TO-3PFM (TO-247) through-hole housing with three pins, it integrates a fast recovery diode.
Verify the specific suffix 'DGVC11' against official ROHM documentation to confirm pinout and packaging details. Ensure the procurement channel provides genuine components with traceable manufacturing dates. Cross-reference the datasheet revision to match design requirements.
Select this component for applications requiring 650V blocking capability and moderate current handling up to 33A. The TO-3PFM package facilitates efficient heat dissipation for high-power density designs. Consider the integrated FRD characteristics when designing snubber circuits or freewheeling paths.
This part belongs to the RGTV series of field stop trench IGBTs from ROHM. It shares architectural similarities with other 650V devices in the lineup but is distinguished by its specific current rating and packaging configuration. It serves as a discrete solution for medium-power switching applications.
Direct substitutes include the RGTV60TK65GVC11. Verify electrical equivalence and pin compatibility before substitution. Other family members may require circuit adjustments due to differing current ratings or thermal characteristics.