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The RGTV80TS65DGC11 is a single IGBT transistor from ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 78 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C and dissipates up to 272 W of power. Packaged in a TO-247N-3 through-hole configuration, it includes an integrated fast recovery diode.
Verify the specific suffix 'C11' against official datasheets to confirm tube packaging details. Ensure compatibility with automotive qualification standards if used in vehicle applications. Cross-reference pinout configurations with the manufacturer's mechanical drawing before PCB layout finalization.
Select this component for high-current applications requiring robust short-circuit handling. The Trench FS technology offers efficiency improvements over standard IGBTs. Consider thermal management requirements due to the 272 W power dissipation rating in the TO-247N package.
This part belongs to ROHM's high-performance IGBT lineup designed for demanding industrial and automotive environments. It complements other models like the RGS80TS65HRC11, offering similar voltage ratings but distinct current and packaging characteristics tailored for specific thermal and spatial constraints.
Direct substitutes include the RGS80TS65HRC11 for automotive-grade requirements. Verify electrical parameters such as Vce(sat) and switching times when considering alternative manufacturers or series replacements.