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The RGTVX2TS65GC11 is a trench field-stop IGBT from ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 111 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 1.9 V at 60 A and 15 V gate drive. Peak pulse collector current reaches 240 A, with a maximum power dissipation of 319 W. Switching characteristics include turn-on energy of 2.08 mJ and turn-off energy of 1.15 mJ under test conditions of 400 V, 60 A, and 10 Ω. Gate charge is specified at 123 nC.
Verify the component status as Not Recommended for New Designs before integration into new products. Confirm availability through authorized distributors, as standard supply chains may be limited. Ensure compliance with RoHS3 specifications and check for any specific handling requirements associated with the TO-247N package during assembly.
Select this component for applications requiring high current density and robust short-circuit tolerance within a 650 V system. Evaluate thermal management capabilities given the 319 W power dissipation rating. Compare switching energies against system constraints to ensure compatibility with existing gate driver circuits and snubber designs.
This part belongs to the RGTVX2 series of trench field-stop IGBTs designed for industrial and general-purpose inverter applications. It represents a high-performance variant optimized for balancing low conduction losses with fast switching speeds. The series targets markets demanding reliability in power conversion systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal characteristics if considering alternative manufacturers' devices with similar 650 V and 111 A ratings.