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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 144A TO247GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：144 A
- Current - Collector Pulsed (Icm)：320 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 80A
- Power - Max：404 W
- Switching Energy：2.65mJ (on), 1.8mJ (off)
- Input Type：Standard
- Gate Charge：171 nC
- Td (on/off) @ 25°C：45ns/201ns
- Test Condition：400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247GE
- Grade：-
- Qualification：-
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Overview
The RGTVX6TS65GC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-efficiency power switching applications. It features a TO-247GE package with a collector-emitter voltage (VCES) of 650V and a continuous collector current (IC) of 80A at 100°C case temperature. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 1.5V at 25°C and supports a short circuit withstand time of 2µs. With a maximum power dissipation of 404W at 25°C and an operating junction temperature range from -40°C to +175°C, it combines low conduction losses with fast switching capabilities.
Feature Summary
- Low Collector-Emitter Saturation Voltage
- High Speed Switching & Low Switching Loss
- Short Circuit Withstand Time 2μs
Applications
- Solar Inverter
- UPS
- Welding
- IH
- PFC
Procurement Notes
Verify the specific ordering suffix C13 against the latest official datasheet to confirm packaging details. Ensure that the procurement channel provides genuine components directly from ROHM or authorized distributors. Confirm RoHS compliance status and lead times prior to placing orders, as manufacturing schedules may vary based on production capacity and regional availability constraints.
Selection Notes
Select this component when designing circuits requiring robust short-circuit protection up to 2 microseconds. Consider the thermal resistance characteristics and derating curves for operation above 25°C case temperature. Evaluate gate drive requirements to optimize switching energy losses, particularly noting the trade-offs between turn-on and turn-off speeds under varying inductive load conditions.
Part Context
This part belongs to the RGTV series of Field Stop Trench IGBTs from ROHM. It is engineered for general-purpose industrial inverters and power conversion systems. The technology integrates trench gate structures with field stop layers to minimize both conduction and switching losses compared to conventional planar designs.
Replacement Considerations
Direct pin-compatible replacements within the same series include RGTVX6TS65DGC11. Verify electrical parameters such as VCE(sat) and switching times before substituting, as differences in internal diode characteristics or short-circuit ratings may exist between variants.
