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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 96A TO-247GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：96 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Power - Max：254 W
- Switching Energy：1.18mJ (on), 960µJ (off)
- Input Type：Standard
- Gate Charge：141 nC
- Td (on/off) @ 25°C：52ns/180ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：95 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247GE
- Grade：-
- Qualification：-
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Overview
The RGW00TS65DGC13 is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and is housed in a TO-247GE-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 50 A at 100°C. Typical collector-emitter saturation voltage is 1.6 V, with a reverse recovery time of 38 ns. Power dissipation reaches 245 W, operating within a temperature range of -55°C to +175°C storage.
Feature Summary
- High-speed switching capability optimized for cost-effective performance
- Integrated very fast and soft recovery Free Wheeling Diode (FRD)
- Low collector-emitter saturation voltage for reduced conduction loss
- Soft switching characteristics that minimize voltage overshoot
Applications
- Power Factor Correction (PFC) circuits
- Solar power converters and inverters
- Medium to high-speed switching frequency converters
Procurement Notes
Verify the complete part number including the suffix GC13 to ensure correct tube packaging and RoHS compliance. Confirm the specific datasheet revision matches design requirements. Check lead times as production cycles may vary. Ensure thermal management solutions align with the 245 W power dissipation rating under expected load conditions.
Selection Notes
Select this component for applications requiring a balance between low conduction losses and fast switching speeds. The integrated FRD simplifies circuit design by eliminating external diode requirements. Consider the TO-247GE-3 package for efficient heat sinking. Evaluate thermal resistance parameters against the system's ambient temperature constraints to maintain junction temperatures within safe limits.
Part Context
This IGBT belongs to the RGW series, which addresses the trade-off between low conduction loss and high-speed switching inherent in traditional silicon devices. The series is designed for high efficiency and includes automotive-grade variants like the RGW00TS65DHR. It represents a field-stop trench technology implementation aimed at reducing switching losses and voltage overshoot in power conversion systems.
Replacement Considerations
Direct pin-to-pin replacements are not explicitly confirmed in public documentation. Designers should evaluate other ROHM RGW or RGT series devices with matching voltage and current ratings. Verify that alternative components offer compatible saturation voltages and switching times to maintain system performance and thermal profiles.
