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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 27A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：27 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 20A
- Power - Max：61 W
- Switching Energy：330µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：59 nC
- Td (on/off) @ 25°C：33ns/76ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGW40TK65GVC11 is a single-channel silicon IGBT from ROHM Semiconductor, housed in a TO-3PFM-3 package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 20 A at 100°C. The typical collector-emitter saturation voltage is 1.5 V, with a maximum gate-emitter voltage of ±30 V. The device supports a junction temperature range from -55°C to 175°C and includes a built-in fast recovery diode.
Feature Summary
- High-speed switching capability for efficient power conversion
- Low collector-emitter saturation voltage to minimize conduction losses
- Integrated soft-switching characteristics to reduce voltage overshoot
- Built-in very fast and soft recovery FRD
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix GVC11 against the manufacturer's latest datasheet to confirm pinout and packaging details. Ensure the component meets RoHS compliance requirements for your assembly process. Confirm that the TO-3PFM-3 package dimensions align with your PCB footprint design before finalizing procurement.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction loss in the 650V class. The integrated FRD simplifies circuit design by eliminating external freewheeling diodes. Consider thermal management capabilities given the 1.5 V saturation voltage at 20 A. Verify suitability for non-automotive environments as per manufacturer guidelines.
Part Context
This part belongs to the RGW series of high-speed trench field-stop IGBTs. The series is designed to balance low conduction loss with fast switching speeds. It utilizes silicon technology and is packaged in a through-hole TO-3PFM format suitable for industrial power modules.
Replacement Considerations
Check for direct replacements within the RGW series with similar voltage and current ratings. Verify pin compatibility if substituting with other manufacturers' 650V TO-3PFM IGBTs. Ensure the replacement maintains the required switching speed and saturation voltage characteristics.
