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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 57A TO-263L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：57 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 25A
- Power - Max：165 W
- Switching Energy：110µJ (on), 230µJ (off)
- Input Type：Standard
- Gate Charge：73 nC
- Td (on/off) @ 25°C：31ns/119ns
- Test Condition：400V, 12.5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263L
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RGW50NL65HRBTL is a single-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed fast switching applications. It features a TO-263-3 (LPDL) surface-mount package and utilizes Silicon technology. The device supports a maximum collector-emitter voltage of 650 V and offers a continuous collector current of 67 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9 V and a gate-emitter leakage current of 200 nA. It operates within a temperature range of -40°C to +175°C with a power dissipation rating of 187 W.
Feature Summary
- Field Stop Trench structure optimized for low saturation voltage and fast switching speeds
- Automotive-grade reliability compliant with AEC-Q101 qualification standards
- Soft switching capability that reduces voltage overshoot during operation
Applications
- On-board and off-board electric vehicle chargers
- DC-DC converters in automotive systems
- Power Factor Correction (PFC) circuits
- Industrial inverters
Procurement Notes
Verify the specific ordering suffix against the official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions align with the specified temperature limits to maintain component integrity.
Selection Notes
Select this component for designs requiring high efficiency in automotive power electronics. The low saturation voltage minimizes conduction losses, while the trench structure supports high-frequency switching. Verify thermal management requirements given the 187 W dissipation rating and ensure the PCB layout accommodates the LPDL package dimensions.
Part Context
This part belongs to the RGW series from ROHM Semiconductor, which focuses on balancing low conduction loss with high-speed switching capabilities. The series is engineered to reduce design burden through soft switching characteristics. It is distinct from other ROHM IGBTs by its specific combination of automotive qualification and surface-mount form factor.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, compare the VCEO, IC ratings, and package footprint. Ensure any replacement also meets AEC-Q101 if automotive application is required.
