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The RGW60TS65DGC11 is a single IGBT transistor from ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 30 A at 100°C. The device has a typical collector-emitter saturation voltage of 1.5 V and a reverse recovery time of 35 ns for its built-in FRD. Power dissipation is rated at 178 W, with an operating temperature range from -40°C to +175°C. It is housed in a TO-247N-3 through-hole package.
Verify the component status as Recommended for New Designs before implementation. Confirm RoHS compliance and lead-free plating specifications during sourcing. Ensure the supplier provides official datasheets matching the RGW60TS65DGC11 designation to avoid confusion with similar models like RGW60TS65GC11.
Select this component for applications requiring high-speed switching and low loss in the 650V class. Compare the 30A current rating and 178W power dissipation against thermal management capabilities. Consider the TO-247N-3 package constraints for PCB layout and heatsinking requirements relative to the specific circuit topology.
This part belongs to the RGW series of high-speed trench field stop IGBTs from ROHM. The series is engineered for整机高效化 (system efficiency improvement). It is classified as a standard-grade product and is explicitly noted as not recommended for automotive equipment use.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with any potential alternatives by matching the 650V rating, 30A current capacity, and TO-247N-3 package dimensions.