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The RGW60TS65EHRC11 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed fast switching applications. It features a 650 V collector-emitter breakdown voltage and a continuous collector current of 30 A at 100°C. The device incorporates a built-in Fast Recovery Diode (FRD) and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a typical collector-emitter saturation voltage of 1.5 V and a typical turn-off time of 63 ns. It operates within a junction temperature range of -40°C to +175°C and utilizes a TO-247N-3 through-hole package with a power dissipation rating of 178 W.
Verify the specific suffix C11 against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the component matches the required thermal and electrical specifications for the target circuit design before procurement.
Select this component for designs requiring automotive-grade reliability combined with high-speed switching performance. The integrated FRD simplifies circuit topology compared to discrete diode solutions. Verify that the gate drive requirements align with the specified saturation voltage and switching times.
This part belongs to the RGW series of Field Stop Trench IGBTs from ROHM. The series is characterized by the elimination of the trade-off between low conduction loss and high-speed switching. It is distinct from non-automotive variants like the RGW60TS65GC11 due to its AEC-Q101 certification and specific internal diode characteristics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 650V rating, 30A current, TO-247N package, and AEC-Q101 qualification independently.