ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 39A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：39 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：81 W
- Switching Energy：760µJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：44ns/143ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：102 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
Download product information
Overview
The RGW80TK65EGVC11 is a single-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and utilizes silicon technology in a TO-3PFM-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 39 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 81 W. It operates within a temperature range of -40°C to +175°C.
Feature Summary
- High-speed fast switching capability utilizing Field Stop Trench IGBT technology
- Integrated Fast Recovery Diode (FRD) for simplified circuit design
- Low collector-emitter saturation voltage for reduced conduction losses
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and terminal plating specifications. Confirm RoHS compliance status directly with the supplier documentation prior to procurement. Ensure the selected distributor provides valid traceability records for the component batch.
Selection Notes
Select this component for applications requiring high-speed switching with integrated freewheeling diodes. Verify that the thermal management system can handle the 81 W power dissipation rating. Ensure the drive circuit accommodates the 30 V maximum gate-emitter voltage limit. Check that the TO-3PFM-3 package dimensions fit the target PCB layout constraints.
Part Context
This part belongs to ROHM's Series W, characterized by high-speed fast switching performance. It is classified as a standard-grade product intended for industrial and consumer electronics rather than automotive applications. The component serves as a replacement for older models like the RGW80TK65E within the same functional family.
Replacement Considerations
The RGW80TS65 is a documented alternative offering similar high-speed switching characteristics in a TO-247N package. Designers must account for differences in pinout compatibility and thermal resistance when substituting between the TO-3PFM and TO-247N form factors.
