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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 78A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：78 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：214 W
- Switching Energy：760µJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：44ns/143ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGW80TS65GC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a 650V collector-emitter voltage rating and a continuous collector current of 40A at 100°C, with a typical saturation voltage of 1.5V. The device utilizes a TO-247N-3 through-hole package, supporting a maximum power dissipation of 214W and an operating temperature range from -40°C to +175°C. Designed for high-speed switching applications, it incorporates built-in anti-parallel diodes and meets RoHS standards.
Feature Summary
- High-speed switching capability utilizing Field Stop Trench technology
- Low collector-emitter saturation voltage for reduced conduction loss
- Integrated fast recovery diode (FRD) for simplified circuit design
- Soft switching characteristics to minimize electromagnetic interference
Applications
- Power Factor Correction (PFC) circuits
- Solar inverter systems
- Uninterruptible Power Supply (UPS)
- Industrial welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the specific suffix GC11 against official ROHM documentation to confirm pinout and thermal specifications. Ensure the procurement channel provides valid traceability data. Confirm that the component status remains recommended for new designs, as obsolete variants may lack support. Validate compliance with environmental directives prior to integration into final assemblies.
Selection Notes
Select this component for applications requiring high-speed switching with moderate current handling capabilities. Compare the 1.5V saturation voltage against alternative models to optimize efficiency. Consider the TO-247N package dimensions for thermal management and PCB layout constraints. Evaluate the short-circuit tolerance if the application demands robust fault protection without immediate shutdown.
Part Context
This part belongs to the RGW series of high-speed IGBTs from ROHM Semiconductor. It shares the TO-247N form factor with other models like the RGW60TS65GC11 but offers distinct current ratings. The series is engineered for general-purpose industrial and consumer electronics power conversion, emphasizing low switching losses and compact system design.
Replacement Considerations
Direct substitutes include the RGW60TS65GC11 for lower current requirements or the RGW80TS65EHRC11 for automotive-grade specifications. Verify pin compatibility and thermal resistance values before swapping components to ensure circuit integrity.
