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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 78A TO-247GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：78 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：214 W
- Switching Energy：760µJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：44ns/143ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247GE
- Grade：-
- Qualification：-
Download product information
Overview
The RGW80TS65GC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 40 A at 100°C. The typical collector-emitter saturation voltage (VCE(sat)) is 1.5 V at 25°C and 1.85 V at 175°C. Power dissipation reaches 214 W at a case temperature of 25°C. The device operates within a junction temperature range of -40°C to +175°C and includes Pb-free lead plating compliant with RoHS standards.
Feature Summary
- Field Stop Trench technology for low saturation voltage
- High-speed switching capability
- Low switching loss with soft switching characteristics
- Pb-free lead plating and RoHS compliance
Applications
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
- Solar Inverters
- Welding equipment
Procurement Notes
Verify the exact suffix against the official datasheet to confirm packaging and material specifications. Confirm that the component meets all required environmental regulations for your specific region before finalizing procurement. Ensure thermal management design aligns with the specified power dissipation ratings.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses. Ensure gate drive voltage remains above 10V to prevent thermal runaway. Verify that the operating junction temperature stays within the -40°C to +175°C range for reliable performance.
Part Context
This part belongs to the RGW series of Field Stop Trench IGBTs from ROHM Semiconductor. It is designed for medium-power switching applications where efficiency and speed are critical. The TO-247N package provides robust mechanical stability and efficient heat dissipation for through-hole mounting.
Replacement Considerations
Check for direct substitutes like the RGW80TS65GC11, ensuring pinout and electrical parameters match. Verify that any replacement maintains the same voltage and current ratings to avoid circuit failure.
FAQ
What is the minimum gate-emitter voltage required to prevent thermal runaway?
The IGBT should not be used with a gate-emitter voltage below 10V, as this may cause thermal runaway.
What is the maximum pulsed collector current?
The maximum pulsed collector current (ICP) is 160 A, limited by the maximum junction temperature.
Is the device suitable for radiation-tolerant applications?
No, the product is not designed to be radiation tolerant and should not be used in aerospace or nuclear control systems.
