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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：214 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：42ns/148ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGW80TS65HRC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and is housed in a TO-247N-3 package for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 650 V, a continuous collector current of 40 A at 25°C, and a typical saturation voltage of 1.9 V. The device supports a power dissipation of 214 W and operates within a junction temperature range of -40°C to +175°C. It meets the AEC-Q101 automotive qualification standard.
Feature Summary
- Field Stop Trench technology enables low conduction loss and high-speed switching characteristics.
- Integrated FRD facilitates soft switching operation, reducing voltage overshoot during switching events.
- AEC-Q101 qualified for high reliability in automotive environments.
Applications
- On-board chargers (OBC)
- DC/DC converters
- Power Factor Correction (PFC) circuits
- Industrial variable frequency motor drives
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides original documentation to validate the component's authenticity and traceability before integration into production designs.
Selection Notes
Select this component when designing systems requiring a balance between low saturation voltage and fast switching speeds. The integrated diode simplifies circuit topology for applications like inverters and converters. Verify that the thermal management solution can handle the specified 214 W power dissipation under the intended operating conditions.
Part Context
This part belongs to the ROHM RGW series, which utilizes trench gate and thin wafer technologies to optimize performance. The series is designed to eliminate the trade-off typically found between low conduction loss and switching speed, offering improved efficiency for power conversion applications.
Replacement Considerations
Direct substitutes are not explicitly confirmed in the provided data. When evaluating alternatives, compare the Vceo, Ic, Vce(sat), and package dimensions. Ensure any replacement also meets AEC-Q101 requirements if used in automotive contexts.
