SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RGWS00TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed switching applications. It features a TO-247GE package with a single configuration and through-hole mounting. The device supports a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 50 A at 100°C. Typical saturation voltage (VCE(sat)) is 1.6 V, with a maximum power dissipation (Pd) of 245 W. Operating temperature ranges from -55°C to 175°C storage and -40°C to 175°C junction. It includes a built-in fast recovery diode (FRD) with a typical reverse recovery time (tf) of 38 ns.
Verify the RoHS compliance status and lead times directly with authorized distributors or the manufacturer before procurement. Confirm that the specific suffix GC13 matches the required tube packaging quantity of 600 units. Ensure design compatibility with the TO-247GE footprint and thermal requirements for the intended application environment.
Select this component when designing systems requiring high-speed switching with integrated freewheeling diodes. The 650V rating suits general industrial and renewable energy inverters. Compare the 1.6V VCE(sat) and 38ns tf against alternatives if minimizing switching losses in medium-frequency applications is critical. Verify thermal management capabilities given the 245W power dissipation limit.
This part belongs to ROHM's WS series, characterized by high-speed switching and cost-effectiveness. It utilizes Field Stop Trench IGBT technology to balance low conduction and switching losses. The RGWS00TS65DGC13 is an enhanced version of the base RGWS00TS65D model, specifically packaged for automated assembly via tube delivery.
Direct substitutes include other ROHM Field Stop Trench IGBTs in the TO-247GE package with similar 650V/50A ratings, such as the RGWSX2TS65DGC13. Cross-vendor replacements must match the VCE(sat), tf, and thermal resistance specifications to ensure circuit performance integrity.