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The RGWS60TS65GC13 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes silicon technology and features a TO-247GE-3 through-hole package. The device has a maximum collector-emitter voltage of 650 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.6 V, a maximum gate-emitter voltage of ±30 V, and a power dissipation rating of 156 W. It operates within a temperature range of -40°C to +175°C.
Verify the specific suffix GC13 against the manufacturer's latest datasheet to confirm packaging and compliance details. Check for obsolescence status as some variants in this series may be marked as not recommended for new designs. Confirm lead times with authorized distributors due to potential supply chain variability.
Select this component for applications requiring a balance of low conduction loss and high reliability in medium-power switching environments. Ensure the thermal management design supports the 156 W power dissipation rating. Compare with higher current variants if load requirements exceed 30 A or lower voltage ratings if system constraints demand it.
This part belongs to the RGWS series of field stop trench IGBTs from ROHM. These devices are designed for general-purpose inverter applications, offering improved switching characteristics compared to older planar technologies. The TO-247GE package provides robust mechanical mounting and efficient heat dissipation for industrial electronics.
Direct substitutes may include other ROHM parts like the RGW60TS65 series, though pinouts and exact electrical specs must be verified. Cross-brand replacements require matching VCEO, IC, and package dimensions.