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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 71A TO-247G
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：71 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：202 W
- Switching Energy：700µJ (on), 660µJ (off)
- Input Type：Standard
- Gate Charge：83 nC
- Td (on/off) @ 25°C：40ns/114ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：88 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247G
- Grade：-
- Qualification：-
Download product information
Overview
The RGWS80TS65DGC13 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247GE-3 package with through-hole mounting. The device supports a collector-emitter voltage of 650 V and a continuous collector current of 50 A at 100°C. Typical saturation voltage is 1.6 V, with a maximum gate-emitter voltage of ±30 V. Power dissipation reaches 245 W. Operating temperature ranges from -40°C to +175°C. It includes a built-in fast recovery diode with a typical reverse recovery time of 38 ns.
Feature Summary
- Field Stop Trench structure for low switching loss
- High speed switching capability suitable for PFC applications
- Built-in very fast and soft recovery FRD
- Short circuit withstand time of 5 µs
Applications
- Power Factor Correction (PFC) circuits
- Solar converters
- Medium to high-speed switching frequency converters
Procurement Notes
Verify the specific suffix GC13 against official datasheets to confirm tube packaging and RoHS compliance status. Confirm lead plating specifications and short-circuit tolerance ratings prior to integration. Ensure thermal management design accounts for the 245 W power dissipation rating in the TO-247GE package.
Selection Notes
Select this component for designs requiring high-speed switching with integrated freewheeling diodes. The 5 µs short-circuit tolerance provides robust protection during fault conditions. Compare saturation voltage and recovery characteristics against alternative trench IGBTs to optimize efficiency in medium-frequency inverter topologies.
Part Context
This part belongs to the RGWS series, characterized by high-speed switching and cost-effectiveness. It utilizes silicon technology within the TO-247GE form factor. The series is designed for general industrial inverters and power conversion systems requiring reliable performance under high-frequency operation.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering any cross-reference components.
