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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 132A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：132 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 75A
- Power - Max：348 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：213 nC
- Td (on/off) @ 25°C：59ns/243ns
- Test Condition：400V, 37.5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGWX5TS65EHRC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and operates with a maximum collector-emitter voltage of 650 V. The device supports a continuous collector current of 132 A at 25°C, with a typical saturation voltage of 1.9 V. It is housed in a TO-247N-3 package for through-hole mounting. Key electrical limits include a gate-emitter voltage of ±30 V, power dissipation of 348 W, and a junction temperature range from -40°C to +175°C.
Feature Summary
- High-speed fast switching capability designed to reduce switching losses.
- Integrated FRD eliminates the need for external anti-parallel diodes.
- Soft switching operation reduces voltage overshoot during transitions.
Applications
- On-board chargers for electric vehicles
- DC/DC converters
- Power Factor Correction (PFC) circuits
- Industrial variable frequency motor drives
Procurement Notes
Verify the specific suffix C11 against the official datasheet to confirm packaging details and automotive qualification status. Ensure the ordering part number matches the exact RoHS compliance and lead-free plating requirements specified by the manufacturer. Cross-reference the Mouser or distributor catalog numbers to validate authenticity before purchase.
Selection Notes
Select this component when high-speed switching and low conduction loss are required simultaneously. The integrated FRD simplifies circuit design by removing external diode components. Verify that the thermal management system can handle the 348 W power dissipation rating within the specified operating temperature range.
Part Context
This device belongs to the RGW series, which utilizes field stop trench technology to balance low on-state voltage and fast switching speeds. It is qualified under the AEC-Q101 standard, indicating suitability for demanding automotive environments alongside industrial power applications.
Replacement Considerations
The part number alias RGWX5TS65EHR refers to the same component family without the specific tube packaging designation. Verify pinout compatibility and thermal characteristics if substituting with other ROHM IGBTs in the same voltage class.
