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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 132A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：132 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 75A
- Power - Max：348 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：213 nC
- Td (on/off) @ 25°C：64ns/229ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGWX5TS65GC11 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and is housed in a TO-247N-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V with a continuous collector current of 132 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 348 W. It operates within a temperature range of -40°C to +175°C.
Feature Summary
- Field Stop Trench structure for optimized performance
- High-speed switching capability
- Soft switching characteristics to reduce voltage overshoot
Applications
- Power Factor Correction (PFC)
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH)
Procurement Notes
Verify the lifecycle status before procurement as the component is marked NRND (Not Recommended for New Designs). Confirm that the TO-247N-3 package dimensions match the target PCB footprint. Ensure thermal management solutions are adequate for the specified 348 W power dissipation under actual operating conditions rather than relying solely on datasheet limits.
Selection Notes
Select this IGBT when high current handling up to 132 A is required alongside low conduction losses. The 1.5 V saturation voltage makes it suitable for efficiency-critical designs. Consider the soft-switching feature if minimizing electromagnetic interference and voltage spikes during turn-off is a priority. Verify compatibility with standard gate drive voltages given the +/- 30 V maximum gate-emitter rating.
Part Context
This component belongs to the RGTV/RGW series from ROHM Semiconductor. This series is engineered to resolve the trade-off between low conduction loss and fast switching speed typical in IGBTs. The RGWX5TS65GC11 represents a specific variant within this family, distinguished by its 132 A current rating and 650 V blocking capability in the TO-247N package.
Replacement Considerations
Check for direct pin-compatible substitutes within the same ROHM RGW or RGTH series that meet the 650V/132A specification. Verify that any alternative maintains the Field Stop Trench architecture to preserve switching behavior. Cross-reference thermal resistance values to ensure equivalent heat dissipation capabilities.
