RHRG1560CC-F085

Overview

The RHRG1560CC-F085 is a hyperfast dual diode manufactured by onsemi, featuring soft recovery characteristics with a reverse recovery time of less than 35 nanoseconds. It utilizes silicon nitride passivated ion-implanted epitaxial planar construction for robust performance. The device supports a peak reverse voltage of 600 volts and handles a forward current of 15 amperes. It operates within a temperature range from -65°C to +175°C and includes avalanche energy rating capabilities.

Feature Summary

• Hyperfast switching with soft recovery characteristics reduces electromagnetic interference during operation.
• Planar construction ensures high reliability and stable electrical performance under thermal stress.
• Avalanche energy rated design provides protection against transient voltage spikes in circuit applications.

Applications

• Switching power supplies
• Power switching circuits
• General purpose rectification

Procurement Notes

Verify the specific suffix F085 against official manufacturer documentation to confirm packaging details, as standard datasheets may list generic tube packaging. Confirm availability status, as this component family has been subject to obsolescence notices. Ensure compliance with RoHS and REACH requirements relevant to your region before finalizing procurement plans.

Selection Notes

Select this component for applications requiring fast recovery times below 35 nanoseconds and high voltage ratings up to 600 volts. Consider the TO-247 package constraints for thermal management and mounting space. Evaluate the dual configuration suitability for bridge or synchronous rectifier topologies compared to single diode alternatives.

Part Context

This part belongs to the RHRG series of hyperfast dual diodes from onsemi. It shares architectural similarities with other models in the family but is distinguished by its specific 600V voltage rating and 15A current capacity. The technology leverages ion-implanted epitaxial planar processes common in high-power discrete semiconductor devices.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs using equivalent electrical parameters such as reverse recovery time and forward voltage drop if cross-referencing with other manufacturers' hyperfast diodes.