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The RJH1CF4RDPQ-80#T2 is a single Silicon N-channel IGBT manufactured by Renesas Electronics Corporation, designed for high-speed power switching applications. It features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 40 A. The device exhibits a maximum on-state voltage (Vce(on)) of 2.5 V when tested at a gate-emitter voltage of 15 V and a collector current of 20 A. Packaged in a TO-247-3 format with tube packaging, it supports surface mount/soldering techniques suitable for robust industrial environments.
This specific part number is currently obsolete and no longer manufactured by Renesas Electronics Corporation. Procurement should focus on identifying valid substitute components from the manufacturer's approved replacement list or equivalent third-party alternatives that match the electrical specifications and package requirements. Verify component authenticity and datasheet revisions before integration into new designs.
Select this component for applications requiring high voltage isolation and fast switching speeds within a TO-247 package. Ensure thermal management solutions accommodate the power dissipation limits defined in the datasheet. Compare the 40 A current rating against peak load requirements to prevent overstress conditions during transient events.
The RJH1CF4RDPQ-80#T2 belongs to the RJH1CF series of silicon N-channel IGBTs from Renesas. This series is engineered for general-purpose power electronics, offering a balance of blocking voltage and conduction performance. The TO-247 package provides mechanical stability and efficient heat transfer capabilities for medium-power industrial applications.
Available substitutes include the Alpha & Omega Semiconductor AOK20B135D1. Verify pin compatibility and electrical parameters such as Vce(on) and switching times when transitioning to alternative vendors to ensure circuit integrity.