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The RJH30E2DPP-00#T2 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes trench gate technology and features a low collector-to-emitter saturation voltage of 1.7 V typical. The component is supplied in bulk packaging and holds an active product status.
Verify the specific datasheet for the RJH30E2DPP-00#T2 variant, as public sources primarily reference the RJP30E2DPP-M0. Confirm that the trench gate G5H series specifications apply to this exact part number before integration into designs.
Select this IGBT for applications requiring low saturation voltage characteristics. Ensure the design accommodates the specific electrical limits defined in the official Renesas documentation for the RJH30E2DPP-00#T2 model.
This component belongs to the IGBT category from Renesas Electronics Corporation. It is distinct from other Renesas products such as the ZSSC3170EE2T signal conditioner or the RJK5014DPP-E0#T2 MOSFET found in related search results.
Public data explicitly links the described trench gate G5H series features to the RJP30E2DPP-M0. Verify if the RJH30E2DPP-00#T2 shares these exact specifications or requires a different substitute.