RJH60A83RDPN-E0#T2

RJH60A83RDPN-E0#T2

$2.13
  • Description:IGBT 600V 20A TO-220AB
  • Series:-

SKU:d221015a68bb Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT 600V 20A TO-220AB
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):150 ns
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Download product information

RJH60A83RDPN-E0#T2

Overview

The RJH60A83RDPN-E0#T2 is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It features an integrated Fast Recovery Diode (FRD) and utilizes the A8-Series technology optimized for low conduction loss and high efficiency. The device is housed in a TO-220AB package with a thermal resistance from junction to case of 2.40 °C/W. Key electrical parameters include a collector-emitter breakdown voltage (VCES) of 600 V, a continuous collector current (IC) of 10 A at 100°C, and a typical saturation voltage (VCEsat) of 1.8 V. Switching characteristics consist of a turn-off time (tf) of 80 ns, a short-circuit withstand time (tsc) of 5 µs, and an off-state energy loss (Eoff) of 0.15 mJ. The integrated FRD exhibits a forward voltage (Vf) of 1.5 V and a reverse recovery time (trr) of 150 ns.

Feature Summary

  • Integrated fast recovery diode for simplified circuit design
  • Optimized A8-Series technology balancing low conduction and switching losses
  • High short-circuit robustness for system protection

Applications

  • Power Factor Correction (PFC) circuits
  • Uninterruptible Power Supply (UPS) systems
  • Solar power generation inverters
  • Welding applications

Procurement Notes

Verify the specific ordering suffix #T2 against official documentation to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the component meets the intended operating temperature range and thermal management constraints for the target application.

Selection Notes

Select this IGBT for applications requiring 600V blocking capability and up to 10A continuous current. The A8-Series offers a balance between low on-state voltage and fast switching speeds suitable for frequencies around 50 to 100 kHz. Consider the thermal resistance of the TO-220AB package when designing heat sinks for high-power density environments.

Part Context

This component belongs to the Renesas IGBT product line, specifically the A8-Series designed for general-purpose inverter applications. It is part of a broader family including variants like RJH60A83RDPE and RJH60A83RDPP, which share similar electrical characteristics but differ in package types such as LDPAK-S and TO-220FL.

Replacement Considerations

Direct substitutes within the same series include RJH60A83RDPE (LDPAK-S package) and RJH60A83RDPP-M0 (TO-220FL package). Verify pinout compatibility and thermal performance differences when transitioning between package styles.

RJH60A83RDPN-E0#T2RJH60A83RDPN-E0#T2
$2.13
Buy Now