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The RJH60D0DPM-00#T1 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a single IGBT configuration in a TO-3PFM through-hole package. The device supports a maximum collector-emitter breakdown voltage of 600V and a continuous collector current of 90A at 25°C. Key electrical parameters include a maximum on-state collector-emitter voltage of 2.2V at 50A, a gate charge of 130nC, and a switching time of 60ns turn-on and 190ns turn-off. The component is rated for a maximum power dissipation of 55W and operates up to a junction temperature of 150°C.
This component is officially designated as obsolete by the manufacturer. Production End-of-Life (EOL) notifications indicate that availability is restricted or limited. Verification of current stock status requires direct consultation with authorized distributors or the manufacturer, as standard supply channels may no longer support new orders. Compliance with RoHS3 standards is confirmed.
Engineers should evaluate alternative components from the same product family or newer generations due to the obsolete status of this specific part number. Selection criteria must account for the 600V rating, 90A current capacity, and TO-3PFM package constraints. Thermal design considerations remain critical given the 55W power dissipation limit and 150°C maximum junction temperature specifications.
The RJH60D0DPM-00#T1 belongs to the RJP/H60Dx series of IGBTs designed for inverter applications. This series is recommended for frequencies between 1 to 50 kHz and includes short-circuit protection guarantees. It is part of Renesas's broader portfolio for power conversion, sharing characteristics with related models like the RJH60D7DPM-00#T1.
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult Renesas official resources for cross-reference recommendations or consider equivalent devices from other manufacturers meeting the 600V/90A TO-3PFM specification.