RJH60F6DPK-00#T0

Overview

The RJH60F6DPK-00#T0 is a trench-type Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 90 A at 25°C. The device is housed in a TO-3P (SC-65-3) through-hole package with a maximum power dissipation of 300 W. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.2 V at 15 V gate drive and 50 A, a gate charge of 130 nC, and a reverse recovery time of 100 ns. Switching energies are specified as 1.1 mJ for turn-on and 600 µJ for turn-off under standard test conditions.

Feature Summary

• Utilizes trench gate technology to achieve low conduction losses and high efficiency.
• Designed for robust performance in high-power switching applications with guaranteed short-circuit capability.
• Optimized for use in inverter circuits operating within recommended frequency ranges.

Applications

• Uninterruptible Power Supplies (UPS)
• Motor control systems
• Solar power generation inverters
• Welding equipment

Procurement Notes

Verify component authenticity through authorized Renesas distributors or direct manufacturer channels. Confirm RoHS compliance status and check for End-of-Life notices, as availability may be restricted. Ensure storage conditions meet moisture sensitivity level requirements prior to mounting.

Selection Notes

Select this IGBT for designs requiring 600V blocking capability and high current handling up to 90A. Consider the TO-3P package for thermal management needs exceeding lower-power surface-mount options. Evaluate switching energy specifications against system frequency requirements to ensure thermal stability.

Part Context

This component belongs to the RJH60D/F series of trench IGBTs from Renesas. These devices are engineered for medium-to-high power conversion applications. The specific suffix indicates the tube packaging format. This series is part of Renesas' broader portfolio of discrete semiconductors for industrial and automotive power electronics.

Replacement Considerations

Direct pin-compatible substitutes within the same Renesas family include RJH60D7ADPK-00#T0 and RJH60M1DPE. Verify that alternative parts match the required current ratings, voltage classes, and switching characteristics before implementation.

FAQ

Is the RJH60F6DPK-00#T0 guaranteed against short circuit?

Yes, the RJH60F series IGBTs are designed with short-circuit ruggedness capabilities, unlike some other series in the lineup such as the RJH60D1DPP-E0 which is not guaranteed.

What is the maximum junction temperature for this device?

The maximum operating junction temperature (Tj) for the RJH60F6DPK-00#T0 is 150°C.

Does this IGBT support logic-level gate drive?

No, this is a standard IGBT requiring a typical gate-emitter voltage of 15V for full saturation, unlike Thermal FETs which support 4V logic-level operation.