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Product Detailed Parameters
- Description：IGBT TRENCH 600V 35A TO-220FL
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 17A
- Power - Max：39.7 W
- Switching Energy：290µJ (on), 290µJ (off)
- Input Type：Standard
- Gate Charge：60 nC
- Td (on/off) @ 25°C：38ns/90ns
- Test Condition：300V, 17A, 5Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FL
- Grade：-
- Qualification：-
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Overview
The RJH60M3DPP-M0#T2 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It features a 600 V collector-emitter breakdown voltage and supports a continuous collector current of 35 A. The device is housed in a TO-220FL through-hole package, providing a power dissipation capacity of 39.7 W. Key electrical characteristics include a maximum gate-emitter voltage of ±30 V and a typical on-state collector-emitter voltage of 1.8 V at rated current.
Feature Summary
- Utilizes trench-gate technology for high switching efficiency and low conduction losses.
- Designed for robust performance in high-voltage power switching applications.
- Offers enhanced thermal stability with a maximum operating junction temperature of 150 °C.
Applications
- High-frequency AC motor drives
- Switch-mode power supplies (SMPS)
- Industrial inverters
Procurement Notes
Verify the specific suffix #T2 against the official Renesas datasheet to confirm tape-and-reel packaging requirements. Ensure that the TO-220FL pinout matches the target PCB footprint. Confirm RoHS compliance status directly from the manufacturer's latest documentation before finalizing procurement orders.
Selection Notes
Select this component when a 600 V IGBT with 35 A current capability is required in a TO-220FL package. Consider the 1.8 V saturation voltage for thermal management calculations. Evaluate the switching speed parameters against the application's frequency requirements to ensure optimal efficiency and minimal switching losses.
Part Context
This part belongs to the RJH60 series of trench-gate IGBTs from Renesas Electronics. The series is characterized by optimized trade-offs between conduction and switching losses. The TO-220FL package variant provides a balance of electrical isolation and thermal dissipation suitable for medium-power industrial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other 600 V, 35 A trench IGBTs in TO-220 packages only after verifying pin compatibility and electrical specifications against the official datasheet.
