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Product Detailed Parameters
- Description：IGBT TRENCH 600V 60A TO-247A
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 30A
- Power - Max：208.3 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：87 nC
- Td (on/off) @ 25°C：54ns/136ns
- Test Condition：300V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247A
- Grade：-
- Qualification：-
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Overview
The RJH60T04DPQ-A0#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 90A at 25°C. The device utilizes G7H series trench gate technology for optimized switching performance, with typical turn-off times around 190ns under standard test conditions. Packaged in a TO-3P (SC-65-3) through-hole housing, it supports a maximum power dissipation of 300W and operates up to a junction temperature of 150°C.
Feature Summary
- G7H Series Trench Gate Technology
- High Current Density Capability
- Through-Hole Mounting
Applications
- Inverter Applications
- Motor Control Systems
- Uninterruptible Power Supplies (UPS)
- Solar Power Generation Inverters
- Welding Equipment
Procurement Notes
Verify the specific suffix #T0 against the manufacturer's latest documentation to confirm packaging details and availability status. As this component belongs to an established product line, check for official End-of-Life (EOL) notifications or Product Change Notices (PCN) prior to finalizing procurement plans to ensure long-term supply continuity.
Selection Notes
Select this IGBT for applications requiring high current handling in the 600V class. Ensure the thermal management design accommodates the 300W power dissipation limit. Verify that the drive circuit provides the required 15V gate voltage for optimal saturation characteristics. Confirm that the switching frequency requirements align with the device's turn-off time specifications.
Part Context
This part belongs to the RJH60D/RJH60M family of trench-gate IGBTs designed for inverter applications. It shares the G7H technology platform with other Renesas devices like the RJH60D7ADPK-00#T0 and RJP65T43DPQ-A0, offering comparable switching speeds and low saturation voltages for efficient power conversion.
Replacement Considerations
Direct replacements within the same package and electrical ratings should be sought from the Renesas RJH60 series. Cross-referencing with the RJP65T43DPQ-A0 may be considered if voltage headroom allows, though pinout and thermal characteristics must be verified.
