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Product Detailed Parameters
- Description：IGBT TRENCH 600V 25A LDPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 12A
- Power - Max：63 W
- Switching Energy：30µJ (on), 180µJ (off)
- Input Type：Standard
- Gate Charge：32 nC
- Td (on/off) @ 25°C：33ns/65ns
- Test Condition：300V, 12A, 5Ohm, 15V
- Reverse Recovery Time (trr)：25 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-83
- Supplier Device Package：LDPAK
- Grade：-
- Qualification：-
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Overview
The RJH60V2BDPE-00#J3 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It features a breakdown voltage of 600 V and a continuous collector current rating of 25 A at 25°C. The device operates with a maximum gate-emitter voltage range of -8 V to +15 V and includes an integrated anti-parallel Fast Recovery Diode (FRD). Packaged in the LDPAK(S)-(1) surface-mount format, it supports high-power switching applications requiring robust short-circuit withstand capability.
Feature Summary
- Integrated anti-parallel fast recovery diode for simplified circuit design
- High short-circuit withstand capability for enhanced system reliability
- Logic-level compatible gate drive requirements
Applications
- Uninterruptible Power Supply (UPS) systems
- Motor control drives
- Solar power generation inverters
- Welding equipment
Procurement Notes
Verify the specific suffix #J3 against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance standards required for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this IGBT for applications operating within the 1 kHz to 50 kHz frequency range. Confirm that the thermal management solution can handle the specified power dissipation under worst-case junction temperature conditions. Verify that the gate driver provides sufficient current to manage the turn-on and turn-off speeds effectively while minimizing switching losses.
Part Context
This component belongs to the Renesas RJH series of IGBTs designed specifically for inverter applications. The series is characterized by optimized trade-offs between conduction and switching losses, making it suitable for medium-frequency power conversion tasks where efficiency and compactness are critical design constraints.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Potential alternatives may include other 600V 25A IGBTs from the same family or competitors offering identical pinouts and electrical characteristics. Validate thermal resistance and package dimensions before implementing any replacement.
