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The RJH60V2BDPP-M0#T2 is a single N-channel IGBT manufactured by Renesas Electronics Corporation. It utilizes trench gate technology and silicon construction, housed in a TO-220FL through-hole package. The device features a drain-source breakdown voltage of 600 V and a continuous collector current rating of 25 A. Key electrical parameters include a maximum power dissipation of 34 W, a gate-emitter voltage limit of ±30 V, and a typical turn-on delay time of 100 ns. The component operates within a junction temperature range of -40°C to +175°C.
Verify the specific suffix #T2 against official Renesas documentation to confirm tape-and-reel packaging configuration. Ensure compatibility with moisture sensitivity levels and handling requirements specified in the datasheet. Cross-reference the manufacturer part number to distinguish from similar variants such as RJH60D1DPP-M0 or RJH60A01RDPD-A0. Confirm that the component meets RoHS compliance standards required for your assembly process.
Select this component when a 600 V rated IGBT with 25 A current capacity is required for inverter designs. The TO-220FL package facilitates efficient heat dissipation for medium-power applications. Consider the 175°C maximum junction temperature for high-thermal environments. Evaluate the trade-off between switching speed and conduction losses inherent to trench gate architectures compared to planar technologies.
This IGBT belongs to the RJH series of discrete semiconductor modules from Renesas Electronics. The series targets industrial and automotive power conversion needs. The TO-220FL form factor distinguishes it from surface-mount alternatives like the RJH60A01RDPD-A0. It complements other high-voltage switches in the portfolio designed for robust operation under varying load conditions.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify direct pin-compatible alternatives only through official Renesas cross-reference tools.