RJH65T46DPQ-A0#T0

$5.46

Description：IGBT TRENCH 650V 80A TO-247A
Series：-

SKU:c389a913badf Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 80A TO-247A
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
Power - Max：340.9 W
Switching Energy：450µJ (on), 550µJ (off)
Input Type：Standard
Gate Charge：138 nC
Td (on/off) @ 25°C：45ns/170ns
Test Condition：400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：100 ns
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247A
Grade：-
Qualification：-

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RJH65T46DPQ-A0#T0

Overview

The RJH65T46DPQ-A0#T0 is a 650V, 30A Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes trench gate and thin wafer technology to achieve high-speed switching characteristics suitable for power conversion applications. The device is housed in a TO-247A through-hole package designed for robust thermal performance and mechanical stability in industrial environments.

Feature Summary

Optimized for high-frequency operation within the 20kHz to 100kHz range
Features low saturation voltage for improved conduction efficiency
Designed with fast switching capabilities to minimize transition losses

Applications

Power Factor Correction (PFC) circuits
Induction heating systems
Air conditioner inverters

Procurement Notes

Verify component authenticity through authorized Renesas distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific label updates or PCN notifications prior to procurement. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain device integrity during assembly.

Selection Notes

Evaluate thermal management requirements based on the TO-247A package limitations. Compare switching speed and saturation voltage parameters against system efficiency targets. Ensure the selected IGBT aligns with the driver circuit's voltage and current capabilities for reliable operation in high-power density designs.

Part Context

This component belongs to the RJP/RJH series of trench gate IGBTs from Renesas. These devices are engineered for medium-to-high power applications requiring efficient energy conversion. The series supports various packaging options to accommodate different thermal and mechanical design constraints in industrial power electronics.

Replacement Considerations

Direct pin-compatible substitutes may include other 650V/30A trench gate IGBTs in TO-247A packages. Verify electrical parameter equivalence, specifically Vce(sat) and switching times, before substitution. Consult official Renesas documentation for recommended migration paths or updated product line replacements.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.