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RJK2055DPA-00#J0 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 200V 20A 8WPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RJK2055DPA-00#J0
- Description：MOSFET N-CH 200V 20A 8WPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：69mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-WPAK (3)
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for RJK2055DPA-00#J0
Single FETs, MOSFETs Overview
The RJK2055DPA-00#J0 is an N-channel power MOSFET manufactured by Renesas Electronics. It features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 20 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 69 mΩ. It is housed in a surface-mount WPAK-8 package, also referred to as SON-8 with dimensions of 5x6 mm. The component utilizes silicon technology and is designed for high-speed power switching applications.
Single FETs, MOSFETs Feature Summary
- N-channel silicon power MOSFET architecture
- High-speed power switching capability
- Surface-mount WPAK-8 packaging
Single FETs, MOSFETs Applications
- High-speed power switching circuits
- General-purpose power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix #J0 against official Renesas documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with moisture-sensitive handling protocols as indicated by the component's classification. Cross-reference the part number with authorized distributors to confirm current availability status and lead times prior to finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a 200 V rating and 20 A continuous current capacity are required in a compact surface-mount form factor. The low on-resistance supports efficient power conversion. Verify that the thermal dissipation requirements align with the WPAK-8 package capabilities and the intended operating environment conditions.
Single FETs, MOSFETs Part Context
This part belongs to the RJK series of N-channel power MOSFETs from Renesas Electronics. These devices are engineered for robust performance in power electronics. The specific model integrates standard silicon MOSFET technology within a small outline package suitable for automated surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameters and package dimensions.
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