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RJK4532DPD-00#J2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 450V 4A MP3A. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RJK4532DPD-00#J2
- Description：MOSFET N-CH 450V 4A MP3A
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：450 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：280 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40.3W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MP-3A
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for RJK4532DPD-00#J2
Single FETs, MOSFETs Overview
The RJK4532DPD-00#J2 is an N-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-to-source voltage of 450V and a continuous drain current rating of 4A. The device exhibits a typical on-resistance of 2300 mΩ. It is housed in the MP-3A package, which corresponds to the TO-252 form factor. The component is lead-free and RoHS compliant, with wafer fabrication occurring in Japan and assembly in China.
Single FETs, MOSFETs Feature Summary
- Designed for high-voltage and medium-current switching applications
- Single N-channel configuration optimized for power control circuits
- RoHS compliant construction with lead-free terminals
Single FETs, MOSFETs Applications
- High-voltage power switching circuits
- Medium-current control circuit designs
- Modern power management systems requiring TO-252 footprint integration
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix J2 against official Renesas documentation to confirm material composition and package details. Ensure compatibility with TO-252 (DPAK) board layouts. Confirm RoHS compliance status through manufacturer certificates rather than distributor claims. Validate country of origin data if required for regulatory purposes.
Single FETs, MOSFETs Selection Notes
Select this component when a 450V breakdown voltage and 4A continuous current capability are required. The 2300 mΩ on-resistance influences conduction losses; verify thermal management requirements based on expected load currents. The MP-3A package dictates specific PCB footprint dimensions and thermal pad connections.
Single FETs, MOSFETs Part Context
This part belongs to the RJK series of discrete power devices from Renesas Electronics. The series focuses on N-channel MOSFETs for general-purpose power switching. The RJK4532DPD variant specifically targets applications needing moderate current handling at high voltages within a surface-mountable package.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout and electrical parameters before considering any alternative components.
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