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RJK6011DP3-A0#J2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas. Its product description is RJK6011DP3-A0#J2 - SILICON NCH S. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RJK6011DP3-A0#J2
- Description：RJK6011DP3-A0#J2 - SILICON NCH S
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for RJK6011DP3-A0#J2
Single FETs, MOSFETs Overview
The RJK6011DP3-A0#J2 is a silicon N-channel single power MOSFET manufactured by Renesas Electronics. It features a maximum drain-source voltage of 600 V and a continuous drain current of 100 mA. The device is housed in a surface-mount SOT-223 package. Key electrical specifications include a gate-emitter maximum voltage range of -30 V to +30 V. The component is classified as a high-power switching device suitable for demanding applications.
Single FETs, MOSFETs Feature Summary
- N-channel silicon construction for reliable switching performance
- High voltage capability up to 600 V for robust operation
- Surface-mount SOT-223 packaging for compact integration
Single FETs, MOSFETs Applications
- Low-voltage DC/DC converters
- Motor drive circuits
- General-purpose high-power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the exact suffix J2 against official Renesas documentation to confirm pinout and marking consistency. Confirm moisture sensitivity level (MSL) requirements prior to handling. Check for end-of-life status or obsolescence notices from the manufacturer before finalizing design-in decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V rated N-channel MOSFET with low current capacity (100 mA) is required. The SOT-223 package is appropriate for surface-mount assembly where moderate thermal dissipation is sufficient. Ensure gate drive voltages remain within the specified -30 V to +30 V limits.
Single FETs, MOSFETs Part Context
This part belongs to Renesas' discrete semiconductor product line, specifically under single FETs and MOSFETs. It serves as a standalone switching element rather than an integrated power management IC. The device is distinct from IGBTs or PMICs offered by the same manufacturer.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with direct replacements through official cross-reference tools or manufacturer guidelines.
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