RJP3047ADPK-80#T2

RJP3047ADPK-80#T2

$3.32
  • Description:HIGH SPEED IGBT
  • Series:*

SKU:51c469daa0df Category: Brand:

  
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Product Detailed Parameters

  • Description:HIGH SPEED IGBT
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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RJP3047ADPK-80#T2

Overview

The RJP3047ADPK-80#T2 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It is housed in a DPAK surface-mount package and designed for high-power switching applications. The device features an 800V collector-emitter breakdown voltage, enabling operation in demanding electrical environments. It supports a continuous collector current of 30A at 25°C, with a maximum power dissipation capability of 160W under specified thermal conditions. These parameters define its suitability for robust power conversion circuits.

Feature Summary

  • High-voltage blocking capability suitable for industrial power systems
  • Surface-mount DPAK packaging for automated assembly integration
  • Optimized saturation characteristics for efficient conduction

Applications

  • Industrial motor drives
  • Switching power supplies
  • Inverter circuits

Procurement Notes

Verify the specific suffix #T2 against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact voltage and current ratings required for the target circuit design before procurement.

Selection Notes

Select this component based on the 800V rating and 30A continuous current capacity. Confirm that the thermal management solution can handle the 160W dissipation limit within the operating temperature range defined in the datasheet.

Part Context

This IGBT belongs to the RJP series of power semiconductors from Renesas. The series is engineered for general-purpose power switching, offering a balance of voltage handling and current carrying capacity for compact electronic designs.

Replacement Considerations

Consult official Renesas cross-reference lists for verified substitutes. Do not assume compatibility with other 800V IGBTs without verifying pinout and electrical parameter alignment.

RJP3047ADPK-80#T2RJP3047ADPK-80#T2
$3.32
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