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The RJP3047ADPK-80#T2 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It is housed in a DPAK surface-mount package and designed for high-power switching applications. The device features an 800V collector-emitter breakdown voltage, enabling operation in demanding electrical environments. It supports a continuous collector current of 30A at 25°C, with a maximum power dissipation capability of 160W under specified thermal conditions. These parameters define its suitability for robust power conversion circuits.
Verify the specific suffix #T2 against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact voltage and current ratings required for the target circuit design before procurement.
Select this component based on the 800V rating and 30A continuous current capacity. Confirm that the thermal management solution can handle the 160W dissipation limit within the operating temperature range defined in the datasheet.
This IGBT belongs to the RJP series of power semiconductors from Renesas. The series is engineered for general-purpose power switching, offering a balance of voltage handling and current carrying capacity for compact electronic designs.
Consult official Renesas cross-reference lists for verified substitutes. Do not assume compatibility with other 800V IGBTs without verifying pinout and electrical parameter alignment.