RJP30E2DPP-M0#T2

$6.87

Description：IGBT
Series：*

SKU:844db87f3d70 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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RJP30E2DPP-M0#T2

Overview

The RJP30E2DPP-M0#T2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes Trench gate technology (G5H series) to achieve a typical collector-to-emitter saturation voltage of 1.7 V. The device features a peak current rating of 200 A and an operating current of 35 A at 25 °C. Packaged in a TO-220FL format with three leads, it is designed for high-speed switching applications.

Feature Summary

Utilizes G5H series trench gate technology for optimized performance
Features low collector-to-emitter saturation voltage characteristics
Designed for high-speed switching operations

Applications

High-power industrial motor drives
Switching power supply circuits
Inverter systems requiring high current handling

Procurement Notes

Verify the specific suffix #T2 against official Renesas documentation to confirm tube packaging requirements. Ensure the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the full part number with the latest datasheet revision history to confirm compliance with current manufacturing specifications and environmental standards before finalizing orders.

Selection Notes

Select this component when a single IGBT with high peak current capability is required. The TO-220FL package facilitates effective thermal management for medium-power applications. Consider the 1.7 V typical saturation voltage for efficiency calculations in low-voltage drop scenarios. Verify that the 200 A peak current rating aligns with the system's transient load requirements and that the operating temperature range supports the intended environment.

Part Context

This component belongs to the RJP30E2 family of single IGBTs from Renesas. It is distinct from other Renesas products such as the ZSSC3170EE2T signal conditioner or the PS9303L2-E3-AX optocoupler. The RJP30E2 series focuses on power switching applications, utilizing advanced trench gate technology to deliver high performance in a robust through-hole package suitable for industrial environments.