ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP30E3DPP-M0#T2 is a high-voltage N-channel power MOSFET manufactured by Renesas Electronics. It features a drain-source breakdown voltage (Vds) of 300 V and a continuous drain current (Id) of 15 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 0.24 Ohms, ensuring efficient conduction with minimal power loss. Designed for through-hole mounting in a TO-220FP-3 package, it supports a gate-source voltage range of ±20 V. Key switching parameters include a typical turn-on delay time of 18 ns and a fall time of 16 ns. The component is rated for a maximum operating temperature of +150°C and offers a power dissipation capacity of 175 W, making it suitable for robust industrial and automotive power applications.
Feature Summary
- High-voltage capability with 300 V drain-source breakdown rating
- Low on-resistance for improved energy efficiency
- Robust thermal performance supporting high power dissipation
- Through-hole packaging for reliable mechanical mounting
Applications
- Automotive power distribution systems
- Industrial motor control circuits
- High-voltage DC-DC converters
- Inverter and chopper circuits
Procurement Notes
Verify the specific ordering suffix to ensure the correct tape-and-reel or tray packaging configuration matches your assembly requirements. Confirm RoHS compliance status through official manufacturer documentation before integration. Cross-reference the datasheet revision date to ensure alignment with latest electrical specifications and handling guidelines during procurement planning.
Selection Notes
Select this component when a 300 V rating and 15 A continuous current are required in a through-hole format. Evaluate the 0.24 Ohm on-resistance against thermal management constraints to determine heatsink necessity. Compare switching speeds against circuit frequency requirements to minimize switching losses. Ensure the TO-220FP-3 footprint fits the PCB layout and mechanical enclosure constraints.
Part Context
This part belongs to Renesas' high-voltage MOSFET portfolio, designed for demanding power switching environments. It complements other devices in the series offering varying voltage and current ratings. The TO-220FP-3 package provides a balance between thermal performance and ease of manual or automated insertion, serving as a standard solution for medium-power applications in automotive and industrial sectors.
Replacement Considerations
Direct replacements must match the 300 V Vds, 15 A Id, and TO-220FP-3 package dimensions. Verify pinout compatibility and thermal resistance characteristics. Consider alternatives from the same family with adjusted Rds(on) if lower conduction loss is prioritized over cost.
