RJP4007ANS-00#Q6

RJP4007ANS-00#Q6

$0.72
  • Description:IGBT 400V 15A
  • Series:*

SKU:f5eacb5d440d Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 400V 15A
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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RJP4007ANS-00#Q6

Overview

The RJP4007ANS-00#Q6 is an Insulated-Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a 400V collector-emitter voltage rating and supports a continuous collector current of 15A. The component is designed for high-power switching applications, offering robust performance in industrial and automotive environments.

Feature Summary

  • High-voltage IGBT structure optimized for efficient power switching
  • Designed for compatibility with strobe lighting driver circuits
  • Industrial-grade reliability for demanding operational conditions

Applications

  • Strobe light driver systems
  • General-purpose power switching modules
  • Industrial control equipment

Procurement Notes

Verify the specific suffix #Q6 against official Renesas documentation to confirm RoHS compliance and lead-free status. Ensure the part number matches the exact datasheet revision required for your design. Contact authorized distributors directly for availability confirmation, as this component may be subject to restricted customer adoption policies or legacy support constraints.

Selection Notes

Select this IGBT when a 400V rating and 15A continuous current capacity are required for strobe or similar pulsed load applications. Consider thermal management requirements due to the power dissipation characteristics of IGBTs at this voltage and current level. Validate gate drive voltage compatibility with the controller circuit before integration.

Part Context

This component belongs to Renesas' portfolio of Insulated-Gate Bipolar Transistors (IGBTs). These devices combine the easy gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The RJP4007ANS series is specifically targeted toward applications requiring reliable high-power switching in compact packages.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided data. Consult Renesas technical support for cross-reference recommendations if this specific part is unavailable.

RJP4007ANS-00#Q6RJP4007ANS-00#Q6
$0.72
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