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Product Detailed Parameters
- Description：IGBTS, 400V, 150A, N-CHANNEL
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RJP4009ANS-WS#Q6 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 400V and a peak pulse collector current of 150A. The device operates with a gate drive voltage range of 2.5V to 6V. It is housed in an 8-VSON surface-mount package, measuring 3x4.4mm. The component supports a junction temperature range from -40°C to 150°C and is designed for high-speed switching applications requiring low on-state voltage characteristics.
Feature Summary
- Small surface mount VSON-8 package design
- High voltage capability up to 400V
- Low drive voltage requirement starting at 2.5V
- Lead-free and halogen-free construction
Applications
- Strobe flash circuits for digital cameras
- Camera module power management
- Consumer electronics flash drivers
Procurement Notes
Verify the specific suffix WS against official Renesas documentation to confirm material or packaging variations compared to standard variants. Ensure compatibility with existing PCB footprints for the 8-VSON package. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before final procurement decisions.
Selection Notes
Select this component when designing camera strobe circuits requiring a compact footprint and 400V blocking capability. The 2.5V logic-compatible gate drive simplifies interface with low-voltage microcontrollers. Verify thermal dissipation requirements for the VSON-8 package under peak pulse conditions to ensure reliable operation within the specified temperature range.
Part Context
This IGBT belongs to Renesas' series of discrete power devices optimized for consumer imaging applications. It replaces older through-hole or larger surface-mount alternatives, enabling miniaturization in modern smartphone and compact camera designs. The part integrates robust switching performance suitable for driving xenon flash tubes efficiently.
Replacement Considerations
Direct substitutes include the RJP4009ANS and RJP4003ANS series from Renesas. Verify pinout compatibility and electrical parameters such as VCES and ICM before substitution. Cross-reference with other 400V N-channel IGBTs in VSON-8 packages if sourcing constraints exist.
