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Product Detailed Parameters
- Description：IGBT 430V TO220FL
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：430 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：10V @ 26V, 200A
- Power - Max：30 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：50ns/100ns
- Test Condition：300V, 200A, 30Ohm, 26V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FL
- Grade：-
- Qualification：-
Download product information
Overview
The RJP4301APP-M0#T2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 430 V and supports a maximum pulsed collector current of 200 A. The device exhibits a typical turn-on delay time of 50 ns and a turn-off delay time of 100 ns under test conditions of 300 V, 200 A, and a gate resistor of 30 ohms. It operates within a junction temperature range of -40°C to +150°C and is housed in a TO-220FL through-hole package.
Feature Summary
- High-voltage switching capability with 430 V collector-emitter breakdown rating
- Fast switching performance with nanosecond-scale delay times
- Robust thermal design suitable for high-power applications
Applications
- Industrial motor drives
- Power supply inverters
- Welding equipment
Procurement Notes
This component is listed as obsolete or last-time buy status. Verify availability through authorized distributors or secondary markets. Confirm RoHS3 compliance and check for specific manufacturing date codes if required for legacy system maintenance. Ensure the TO-220FL package matches the existing board footprint.
Selection Notes
Select this IGBT for circuits requiring 430 V blocking voltage and up to 200 A pulsed current. Ensure the gate drive circuit can handle the specified delay times and that the heat sinking solution supports the 30 W power dissipation at the expected operating junction temperature. Verify compatibility with the TO-220FL mounting style.
Part Context
The RJP4301 series represents Renesas' lineup of high-performance IGBTs designed for medium-power switching applications. The APP suffix typically denotes specific internal die or packaging variations within the product family. This component belongs to the broader category of discrete power semiconductors used in energy conversion systems.
Replacement Considerations
As the part is obsolete, verify pinout compatibility with potential substitutes. Check datasheets for equivalent 430V/200A IGBTs in TO-220 packages from other manufacturers. Ensure switching characteristics and thermal resistance values meet or exceed the original specifications.
