RJP60D0DPM-00#T1

Overview

The RJP60D0DPM-00#T1 is a single N-channel IGBT manufactured by Renesas Electronics Corporation. It features a trench gate structure designed for high-speed power switching applications. The device supports a collector-emitter breakdown voltage of 600 V and a continuous collector current of 45 A at 25°C. Key electrical parameters include a maximum saturation voltage of 2.1 V at 15 V gate drive and 22 A collector current, with a typical short-circuit withstand time of 5 µs. Thermal performance is characterized by a junction-to-case thermal impedance of 0.93 °C/W and a maximum power dissipation of 40 W. The component operates within a junction temperature range up to 150°C and utilizes a TO-3PFM through-hole package.

Feature Summary

• Trench gate technology for optimized switching speed and low conduction losses
• High short-circuit robustness with a typical withstand time of 5 µs
• Low collector-emitter saturation voltage for improved efficiency
• Lead-free plating compliant with environmental standards

Applications

• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supply (UPS) systems
• Solar power generation inverters
• Welding equipment power stages

Procurement Notes

Verify the specific ordering suffix and revision level against the latest manufacturer datasheet before integration. Confirm that the TO-3PFM package dimensions match the target PCB footprint. Check for any Product Change Notifications (PCN) regarding label updates or material changes. Ensure the design accounts for the specified short-circuit withstand time limits during fault conditions.

Selection Notes

Select this component for designs requiring 600V blocking capability with moderate current handling around 45A. The trench gate architecture suits applications prioritizing lower switching losses compared to planar devices. Evaluate thermal management requirements based on the 40W power dissipation rating and 0.93°C/W thermal impedance. Consider the 5µs short-circuit tolerance when designing protection circuitry for inverter legs.

Part Context

This part belongs to the RJP60D0 series of single IGBTs from Renesas. It shares the same basic product number as other variants like the RJP60D0DPP-M0 but differs in packaging and terminal configuration. The DPM suffix indicates the TO-3PFM leaded package format, distinguishing it from surface-mount or module alternatives within the broader 600V IGBT portfolio.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult the official Renesas replacement guide or contact technical support directly for qualified alternative components.