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The RJP60F5DPK-01#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A at 25°C. The device utilizes a TO-3P (SC-65-3) through-hole package designed for high-power switching applications. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.2V at 37A with a 15V gate drive, and a total gate charge of 78nC. The component supports a maximum junction temperature of 150°C and offers switching times of 50ns (turn-on) and 135ns (turn-off) under specified test conditions.
Verify the specific ordering suffix #T0 against the manufacturer's latest datasheet to confirm packaging details and RoHS compliance status. Check for product change notifications or end-of-life announcements from Renesas Electronics prior to finalizing procurement plans. Ensure that the requested quantity aligns with the tube packaging format specified in official documentation.
Select this IGBT for designs requiring 600V isolation and high current handling up to 75A. Consider the 2.2V Vce(sat) for conduction loss calculations and the 78nC gate charge for driver selection. Ensure the PCB layout accommodates the TO-3P footprint and provides adequate thermal resistance to maintain junction temperatures within the 150°C limit during operation.
This component belongs to the RJP/H60Dx and RJP/H60Fx series of IGBTs recommended by Renesas for single-phase PFC and inverter topologies. These devices are specifically targeted at applications such as air conditioners, IH cookers, and welding machines, operating typically between 10kHz and 100kHz.
Consult the Renesas replacement matrix for verified cross-references. Potential substitutes may include other parts from the RJP60F or RJH60D series, provided they match the TO-3P package, 600V rating, and pinout configuration.