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The RJP65T43DPQ-A0#T2 is a 650V, 30A N-channel Insulated Gate Bipolar Transistor (IGBT) from Renesas Electronics. It utilizes G7H series trench gate and thin wafer technology for high-speed switching with a typical fall time of 45ns at 20A collector current. The device features a saturated voltage of 1.8V (typical) under standard test conditions. Designed for through-hole mounting in TO-247A packages, it supports operating frequencies between 20kHz and 100kHz. The component is RoHS compliant and lead-free.
Verify the obsolete status of this specific part number before procurement planning. Confirm that the #T2 suffix corresponds to the tube carrier type as documented. Ensure design-in compatibility with existing thermal management systems given the TO-247A package constraints. Check for available replacement components if long-term supply is required.
Select this IGBT for applications requiring operation within the 20kHz to 100kHz frequency range. Verify that the system can handle the 30A collector rating at a case temperature of 100°C. Note that short-circuit withstand time is not guaranteed; design protection circuits accordingly. Consider the 1.8V saturation voltage impact on conduction losses at 20A.
This component belongs to the RJP/H65T4x family of G7H series IGBTs. It is specifically optimized for power factor correction applications. The device represents a transition point in Renesas' discrete power semiconductor portfolio, utilizing advanced trench gate structures to improve switching performance compared to previous planar technologies.
Publicly confirmed substitute part numbers are not available in the provided documentation. As the component is marked obsolete, engineers should consult Renesas for recommended migration paths or equivalent devices within the RJP/H60Fx or newer G-series families.