RJS6004WDPK-00#T0

$32.69

Description：DIODE ARRAY SIC 600V 10A TO-3P
Series：-

SKU:fa2c7df96937 Category: Diode Arrays Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：DIODE ARRAY SIC 600V 10A TO-3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：600 V
Current - Average Rectified (Io) (per Diode)：10A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：15 ns
Current - Reverse Leakage @ Vr：10 µA @ 600 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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RJS6004WDPK-00#T0

Overview

The RJS6004WDPK-00#T0 is a silicon carbide (SiC) Schottky barrier diode manufactured by Renesas Electronics Corporation. It features a common cathode configuration in a TO-3P-3 package, designed for through-hole mounting. The device supports a reverse voltage of 600 V and a continuous forward current of 10 A (DC). It exhibits fast recovery characteristics with a reverse recovery time typically under 500 ns for currents exceeding 200 mA. This component is classified as obsolete and is no longer in active production.

Feature Summary

Utilizes silicon carbide material for high-efficiency switching
Common cathode dual-diode architecture
Fast recovery performance suitable for high-frequency applications

Applications

High-power DC/DC converters
Industrial power supply units
Uninterruptible power supply (UPS) systems

Procurement Notes

This specific part number is officially marked as obsolete by the manufacturer. Procurement should focus on verifying the authenticity of remaining stock from authorized distributors or exploring qualified replacement components. Ensure that any sourced units meet original RoHS compliance standards and verify lead-free status before integration into new designs.

Selection Notes

Engineers requiring this component must account for its discontinued status when designing new products. Selection criteria should prioritize devices with matching voltage ratings, current capabilities, and package dimensions to ensure mechanical compatibility. Verify thermal management requirements align with the TO-3P-3 form factor and confirm that substitute parts offer equivalent reverse recovery times for circuit stability.

Part Context

This component belongs to Renesas' SiC Schottky diode portfolio, which targets high-voltage industrial and automotive applications. The TO-3P-3 package provides robust thermal dissipation capabilities essential for high-current operations. As an obsolete item, it represents legacy technology within the company's historical product line, previously utilized in demanding power conversion environments.