RM100N40DFV

$0.51

Description：N Channel 100A 40V DFN5X6
Series：-
Mfr：Rectron USA
Package：Tape & Reel (TR)

SKU:58e40d757996 Category: Single FETs, MOSFETs Brand: Rectron USA

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Product introduction

Product Detailed Parameters

Description：N Channel 100A 40V DFN5X6
Series：-
Mfr：Rectron USA
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1827 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerVDFN

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RM100N40DFV

Overview

The Rectron RM100N40DFV is an N-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a DFN5X6-8L surface mount package and supports a drain-source voltage of 40 V with a continuous drain current of 100 A. The device offers low on-resistance, specified as less than 3.2 mΩ at VGS=10V and less than 4.6 mΩ at VGS=4.5V. Thermal performance includes a junction-to-ambient thermal resistance of 48°C/W.

Feature Summary

Advanced trench technology design for ultra-low on-resistance
High density cell structure providing excellent stability and uniformity
Fully characterized avalanche voltage and current capabilities
Special process technology engineered for high electrostatic discharge capability

Applications

Load switching circuits
Hard switched applications
High frequency circuit designs
Uninterruptible power supply systems

Procurement Notes

Verify the specific suffix 'V' against official Rectron documentation to confirm reel packaging specifications. Ensure the ordered component matches the DFN5X6-8L footprint and marking code '100N40'. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high current handling in compact surface mount layouts. The low gate charge and fast switching characteristics make it suitable for efficient power conversion. Evaluate thermal management requirements based on the 48°C/W junction-to-ambient resistance rating under your specific operating conditions.

Part Context

This part belongs to the Rectron N-channel enhancement mode power MOSFET family. It utilizes silicon trench technology optimized for low RDS(ON) and high efficiency. The device is housed in a leadless DFN5X6-8L package designed for superior heat dissipation and automated surface mount assembly processes.