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The RN1101ACT(TPL3) is a pre-biased NPN transistor from the Toshiba RN1101 series, integrating bias resistors into a single SOT-323 package. It features a collector-emitter voltage of 50 V and a maximum collector current of 100 mA. The built-in resistors are R1 = 4.7 kΩ and R2 = 4.7 kΩ. Electrical characteristics include a DC current gain (hFE) of at least 80 at IC = 10 mA, a transition frequency (fT) of 250 MHz, and a collector-emitter saturation voltage of 0.3 V max at IC = 5 mA.
Verify the specific ordering suffix ACT(TPL3) against official Toshiba Semiconductor documentation to confirm exact packaging and reel specifications. Ensure compliance with RoHS directives and verify that the intended application does not fall under restricted categories such as automotive or medical equipment without explicit manufacturer approval.
Select this component when a compact NPN solution with fixed 4.7 kΩ base and emitter resistors is required. Consider the 50 V breakdown voltage and 100 mA current limits during design. Evaluate the 250 MHz transition frequency for high-speed switching requirements and ensure thermal dissipation stays within the 100 mW power rating.
This part belongs to the Toshiba RN1101 through RN1106 family of digital transistors. These components share a common epitaxial silicon structure and package type but differ in internal resistor values. The RN1101 variant specifically pairs equal 4.7 kΩ resistors, distinguishing it from other models like the RN1105 which uses asymmetric resistance ratios.
Direct functional substitutes within the same series include RN1102, RN1103, RN1104, RN1105, and RN1106, provided their specific resistor values match the circuit requirements. Complementary PNP replacements are available in the RN2101 series.