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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 20V 0.05A CST3
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：50 mA
- Voltage - Collector Emitter Breakdown (Max)：20 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：50 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：CST3
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Overview
The RN1101CT(TPL3) is a silicon NPN epitaxial type digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 100 mW. The device features an input resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ. It operates with a junction temperature up to 150 °C and has a transition frequency of 250 MHz.
Feature Summary
- Built-in bias resistors for simplified circuit design
- Reduced component count and manufacturing complexity
- Complementary configuration to the RN2101 to RN2106 series
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix CT(TPL3) against official Toshiba documentation to confirm packaging details. Ensure compliance with RoHS directives and verify environmental specifications before procurement. Confirm that the component meets the required reliability standards for the intended application environment.
Selection Notes
Select this component when an NPN digital transistor with equal base and emitter resistors is required. The 4.7 kΩ resistor values are suitable for standard logic interface applications. Consider the complementary PNP RN2101 for designs requiring matched NPN/PNP pairs in similar configurations.
Part Context
This part belongs to the RN1101 to RN1106 series of pre-biased transistors. These devices utilize Toshiba's PCT process technology. The series is designed to replace discrete resistor-transistor combinations, offering space savings on printed circuit boards while maintaining consistent electrical characteristics across the product line.
Replacement Considerations
The RN2101 serves as the direct complementary PNP counterpart within the same series. Verify pinout compatibility and electrical symmetry if substituting between NPN and PNP types in existing designs.
