RN1101,LF(CT

$0.15

Description：TRANS PREBIAS NPN 50V 0.1A SSM
Series：-

SKU:bc4902cdef9e Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V 0.1A SSM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：250 MHz
Power - Max：100 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Supplier Device Package：SSM

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RN1101,LF(CT

Overview

The RN1101,LF(CT is a pre-biased NPN silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a power dissipation (PC) of 100 mW. The device features an input resistor (R1) of 4.7 kΩ and an emitter-base resistor (R2) of 4.7 kΩ. It has a transition frequency (fT) of 250 MHz and a DC current gain (hFE) minimum of 30 at IC = 10 mA. The package is SSM (SC-75/SOT-416).

Feature Summary

Integrates built-in bias resistors to reduce component count.
Simplifies circuit design for switching and driver applications.
Complementary to the RN2101 to RN2106 PNP series.

Applications

Switching circuits
Inverter circuits
Interface circuits
Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format and compliance status. Confirm that the 'LF' designation aligns with RoHS requirements for the target application. Ensure the SSM package footprint matches the PCB layout specifications before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN digital transistor with a 4.7kΩ/4.7kΩ resistor ratio is required. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the complementary RN2116 or similar PNP devices if a matched pair is needed for push-pull configurations.

Part Context

This part belongs to the RN1101-RN1106 series of pre-biased transistors from Toshiba. These components are designed to replace discrete resistor-transistor networks in space-constrained designs. The series offers various resistor ratios to accommodate different drive requirements while maintaining a small surface-mount footprint.

Replacement Considerations

Public confirmed substitutes include DDTC144GE-7-F, DTC114TET1G, and DTC114TETL. Verify pinout compatibility and electrical parameter equivalence before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.